Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on (001)GaAs by LP-MOCVD

摘要

High quality zinc-blende BxGa1-xAs, BxAl1-xAs, BxGa1-x-yInyAs epilayers and relevant MQW structures containing 10-period BGaAs(10nm)/GaAs(50nm) and BGaInAs(10nm)/GaAs(50nm) have been successfully grown on exactly-oriented (001)GaAs substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium, trimethylaluminium, trimethylindium and arsine were used as the precursors. Boron incorporation behaviors have been studied as a function of growth temperature and gas-phase triethylboron mole fraction. In this study, the maximum boron composition x of 5.8% and 1.3% was achieved at the same growth temperature of 580oC for bulk BxGa1-xAs and BxAl1-xAs, respectively. 11K photoluminescence (PL) peak wavelength of lattice-matched BxGa1-x-yInyAs epilayer with boron composition of about 4% reached 1.24μm.