Optimum Design of Multi-finger SiGe HBT with Non-uniform Length for Power Application

摘要

With a three-dimensional thermal-electrical model,a non-uniform emitter length structure in multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented to improve thermal stability.Compared with the traditional uniform emitter length design,the peak temperature of multifinger SiGe HBT with non-uniform length is lowered.Therefore,it can operate at large current and has a higher power handling capability in power application.