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Latest amorphous silicon microbolometer developments at LETI-LIR

机译:LETI-LIR的最新非晶硅微辐射热计开发

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The Laboratoire Infrarouge (LIR) of the Electronics and Information Technology Laboratory (LETI) has been involved in the development of Uncooled IR technology since 1986. Along these years, more and more technology improvements have been done at LETI and ULIS for large-scale production and broad commercialisation of advanced devices.With ULIS support, LETI is still pushing forward the technology, taking advantage of the well-established user-friendly properties of amorphous silicon. These developments are primarily driven by performance enhancement and cost reduction.In this outlook, the paper will first report on the recent improvements we have brought to microbolometer FPAs with 35 μm pixels, resulting in 11 mK NETD measurements. At the same time, 25 μm pixels have been demonstrated for high performance achievement. LETI is also developing a 1024 × 720, 17 μm pitch IRFPA that aims very challenging NETD < 40 mK; the paper will give the main concerns we have focused on to achieve this result. Finally, the LETI is preparing the next generation of very low cost Uncooled IRFPA, thanks to passing on all the microbolometer technology developments to the LETI 8 inches wafer facility.
机译:自1986年以来,电子和信息技术实验室(LIR)的Laboratoire infraruge(Lir)已经参与了未处理红外技术的开发。在此目前,Leti和Ulis的大规模生产越来越多的技术改进以及高级设备的广泛商业化。 凭借Ulis支持,Leti仍在推动该技术,利用非晶硅的完善的用户友好特性。这些发展主要由性能提升和降低成本驱动。 在这篇景观中,本文将首先报告最近的改进,我们已经带到了35微米像素的微致多压计FPA,导致11 MK NetD测量。同时,已经证明了25μm像素用于高性能成果。 Leti还开发了1024×720,17微米的球场IRFPA,旨在非常具有挑战性的NetD <40 mk;本文将提供我们专注于实现这一结果的主要担忧。最后,由于通过所有微倍频仪技术的发展到Leti 8英寸晶圆设施,因此Leti正在准备下一代非常低成本的IRFPA。

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