Photoluminescence properties of rare-earth doped Si-based materials

摘要

The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by Nd by ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to the dose of implantation and to the temperature of thermal annealing.The above samples were treated by anodization method. The PL spectra of porous samples which were treated by HNO_3 were measured .The results show light emission efficiency of the porous samples that were treated by electro-chemical anodization etch and HNO_3 is higher than those of ordinary PS samples under the same measuring conditions.