Method for generating photoluminescence emission lines from transition element doped CAF2 thin films over a Si-based substrate

摘要

A method and apparatus for producing photoluminescence emissions (68) from thin CaF.sub.2 films grown on either silicon or silicon/aluminum substrate shows narrow emission linewidth and high emission intensities for CaF.sub.2 with thickness as low as 0.2 &mgr;m. The preferred embodiment is doped with a rare-earth such as Nd.