SILICON THIN FILM DOPED WITH HIGH CONCENTRATION OF TRANSITION METAL ELEMENT, AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To manufacture an optical/magnetic semiconductor thin-film doped with high concentration of a transition metal element, by optically/thermally exiting raw material gas for semiconductor and/or vapor of the transition metal element, and feeding them into a reaction region.;SOLUTION: This method for manufacturing the semiconductor thin film doped with the transition metal element, includes setting a silicon substrate 3 with the cleaned surface in vacuum atmosphere, and feeding the raw material gas for the semiconductor and the vapor of the transition metal element, to the surface of the silicon substrate 3. At this time, the semiconductor raw material gas and/or the vapor of the transition metal element are optically/thermally excited 1 and fed into the reaction region. Thereby, the method provides the semiconductor thin-film material suitable for an optical/magnetic semiconductor device, which is doped with the transition metal element in high concentration to the crystalline silicon thin-film, without causing a phase separation or a reaction of forming compounds with silicon, and develops the characteristics peculiar in the transition metal element.;COPYRIGHT: (C)2002,JPO