Uniformity Correlation of AlGaN/GaN HEMTs grown on 3-inch SiC Substrates

摘要

AlGaN/GaN HEMT devices are of high commercial and defense interest for microwave amplification purposes because of their ability to provide significantly higher power density and bandwidth compared to conventional GaAs-based HEMTs. For commercial production of the HEMTs, it is very important to obtain a high degree of performance uniformity for the devices fabricated over a 3-inch diameter (larger in future) substrate. At the present state-of the-art, the non-uniformity of device performance metrics over a full 3" wafer is too high to achieve yield required for commercial realization of the technology.