Visible-blind Metal-semiconductor-Metal Structured Deep-ultraviolet Photodetectors Using Single-Crystalline Diamond Thin Film

摘要

Metal-semiconductor-metal (MSM) planar photodiodes and photoconductors were fabricated on unintentionally doped homoepitaxial diamond thin films deposited on Ib and IIa-type diamond substrated. The MSM photoconductor on the epilayer grown on the Ib-type substrate exhibits the highest discrimination ratio up to 10~8 between 210 nm and visible light and a photocurrent gain around 33 at 220 nm. The persistent photoconductivity is rather week for such kind of photoconductor.