THIN STABILIZED ZIRCONIA FILM/SINGLE-CRYSTALLINE SILICON SUBSTRATE LAMINATED STRUCTURE AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To produce a stabilized zirconia film/c-Si laminated structure free from ion drift. ;SOLUTION: A thin stabilized zirconia (ZrO₂) film 2 is grown on a single- crystalline silicon semiconductor substrate 1 to obtain the objective laminated structure. The zirconia film 2 contains about equal amts. of a stabilizer made of oxide of a metal whose valence is lower than 4 as the valence of Zr and an oxygen ion hole vanishing agent made of oxide of a metal whose valence is higher than 4.;COPYRIGHT: (C)1997,JPO