High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film

摘要

The authors report on the high-performance metal-semiconductor-metal planar photoconductors based on unintentionally doped homoepitaxial diamond thin films. The photoconductors exhibit a discrimination ratio up to 10~8 between 210 nm and visible light. The spectral responsivity at 220 nm is about 6 A/W biased at 3 V, corresponding to a photoconductivity gain of 33. Time-resolved photoresponse measurements using a pulsed 193 nm laser show that the response time is smaller than the pulse width of 10 ns.