首页> 外文会议>2007 international conference on electronic materials and packaging >Dynamic Finite Element Analysis on Underlay Microstructure of Cu/low-K Wafer during Bonding Process
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Dynamic Finite Element Analysis on Underlay Microstructure of Cu/low-K Wafer during Bonding Process

机译:铜/低钾晶圆键合过程中基底微结构的动态有限元分析

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In the present paper, the tensile mechanical properties of thin gold wire before/after electric flame-off (EFO) process have been investigated by self-design pull test fixture. Microstructure characteristics of free air ball (FAB) and heat affected zone (HAZ) are also carefully investigated. The accurate experimental material data should be reflected as input for precise finite element analysis. Numerical model based on explicit time integration scheme software ANSYS/LS-DYNA is developed to simulate the ball bond of wire bonding process. Because the crack of low-K layer and delamination of copper via are observed, dynamic transient analysis is performed to inspect the overall stress/strain distributions on the microstructure of Cu/Low-K wafer. Special emphasizes are focused on the copper via layout and optimal design of Cu/Low-K microstructure. A series of comprehensive parametric studies were conducted in this research.
机译:在本文中,通过自行设计的拉力测试夹具研究了金丝细丝在电喷火(EFO)之前/之后的拉伸机械性能。还仔细研究了自由空气球(FAB)和热影响区(HAZ)的微观结构特征。准确的实验材料数据应反映为精确有限元分析的输入。建立了基于显式时间积分方案软件ANSYS / LS-DYNA的数值模型,以模拟引线键合过程的球形键合。由于观察到了低K层的裂纹和铜通孔的分层,因此进行了动态瞬态分析,以检查Cu / Low-K晶片微观结构上的整体应力/应变分布。特别强调的是铜的通孔布局和Cu / Low-K微结构的优化设计。在这项研究中进行了一系列全面的参数研究。

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