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Formation of self-assembled InAs/GaAs quantum dots with an ultranarrow photoluminescence linewidth of /spl sim/11 meV by rapid thermal annealing

机译：通过快速热退火形成具有/ spl sim / 11 meV的超窄光致发光线宽的自组装InAs / GaAs量子点

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We report the effects of rapid thermal annealing on emission properties of highly uniform self-assembled InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition and demonstrate an ultranarrow linewidth of /spl sim/11 meV by the annealing.

机译：我们报告了快速热退火对通过金属有机化学气相沉积生长的高度均匀的自组装InAs / GaAs量子点的发射特性的影响，并通过退火证明了/ spl sim / 11 meV的超窄线宽。

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《Indium Phosphide and Related Materials, 2005. International Conference on 》|2005年|P.279-282|共4页
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Yang; T.; Tatebayashi; J.; Aoki; K.; Nishioka; M.; Arakawa; Y.;
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中图分类工业技术 ;
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III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; photoluminescence; rapid thermal annealing; self-assembly; semiconductor quantum dots; InAs-GaAs; emission properties; metalorganic chemical vapor deposition; rapid thermal annealing; self-ass;

机译：III-V类半导体; MOCVD涂层;砷化镓;铟化合物;光致发光;快速热退火;自组装;半导体量子点; InAs-GaAs;发射特性;金属有机化学气相沉积;快速热退火;自组装;

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专利

1. Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition [J] . Tao Yang, Jun Tatebayashi, Shiro Tsukamoto, Applied Physics Letters . 2004 ,第15期

机译：低压金属有机化学气相沉积法产生的高度均匀的自组装InAs / GaAs量子点产生的窄光致发光线宽（<17 meV）
2. Rapid thermal annealing effects on structural and optical properties of self-assembled InAs/GaAs quantum dots capped by InAlAs/InGaAs layers [J] . Lu W, Li DB, Zhang ZY, Chinese physics letters . 2005 ,第4期

机译：快速热退火对被InAlAs / InGaAs层覆盖的自组装InAs / GaAs量子点的结构和光学性质的影响
3. Rapid thermal annealing effects on structural and optical properties of self-assembled InAs/GaAs quantum dots capped by InAlAs/InGaAs layers [J] . Lu W, Li DB, Zhang ZY, Chinese physics letters . 2005 ,第4期

机译：快速热退火对被InAlAs / InGaAs层覆盖的自组装InAs / GaAs量子点的结构和光学性质的影响
4. Formation of self-assembled InAs/GaAs quantum dots with an ultranarrow photoluminescence linewidth of /spl sim/11 meV by rapid thermal annealing [C] . Yang T., Tatebayashi J., Aoki K., International Conference on Indium Phosphide and Related Material . 2005

机译：通过快速热退火形成自组装的INAS / GAAS量子点/ SPL SIM / 11 MEV的超阵列光致发光线宽
5. Self-Assembled InAs/GaAs/ Quantum Dot Solar Cells. [D] . Li, Tian. 2015

机译：自组装的InAs / GaAs /量子点太阳能电池。
6. Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing [O] . Hanxue Zhao, Soon Fatt Yoon, Chun Yong Ngo, 2011

机译：通过快速热退火改善1.3μmInAs / GaAs量子点激光器中的基态调制特性
7. Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots [O] . SRUJAN M, GHOSH K, SENGUPTA S, 2010

机译：热退火对自组装InAs / GaAs量子点光致发光影响的模型的演示和实验验证

Formation of self-assembled InAs/GaAs quantum dots with an ultranarrow photoluminescence linewidth of /spl sim/11 meV by rapid thermal annealing

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