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Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

机译：具有硅碳源/漏区的薄型绝缘体上硅N-MOSFET，可增强性能

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《Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International》|2005年|P.497-500|共4页
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Kah-Wee Ang; King-Jien Chui; Bliznetsov V.; Yihua Wang; Lai Yin Wong; Chih-Hang Tung; Balasubramanian N.; Ming-Fu Li; Ganesh Samudra; Yee-Chia Yeo;
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1. Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions [J] . Kah-Wee Ang, Hock-Chun Chin, King-Jien Chui, Solid-State Electronics . 2007,第11a12期

机译：具有硅碳源/漏区的绝缘体上应变硅n-MOSFET的载流子反向散射特性
2. Strain Measured In A Silicon-on-insulator, Complementary Metal-oxide-semiconductor Device Channel Induced By Embedded Silicon-carbon Source/drain Regions [J] . Conal E. Murray, Z. Ren, A. Ying, Applied Physicsletters . 2009,第6期

机译：在嵌入式硅碳源/漏区引起的绝缘体上硅，互补金属氧化物半导体器件通道中测得的应变
3. Strained-SOI n-Channel Transistor With Silicon-Carbon Source/Drain Regions for Carrier Transport Enhancement [J] . King-Jien Chui, Kah-Wee Ang, Hock-Chun Chin, IEEE Electron Device Letters . 2006,第9期

机译：带有硅碳源/漏区的应变SOI n沟道晶体管，用于增强载流子传输
4. Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement [C] . Kah-Wee Ang, King-Jien Chui, Bliznetsov V., IEEE International Electron Devices Meeting . 2005

机译：具有硅 - 碳源/漏极区的薄体硅式绝缘体N-MOSFET用于性能增强
5. Implant Activated Source/Drain Regions for Self-Aligned IGZO TFT [D] . Chowdhury, Rahnuma Rifat . 2019

机译：用于自对准IGZO TFT的植入活性源/漏区
6. Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor [O] . Feng-Tso Chien, Jing Ye, Wei-Cheng Yen, 2021

机译：凸源/漏极（RSD）和垂直掺杂漏极（LDD）多Si薄膜晶体管
7. Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability [O] . Zhi Ye, Lei Lu, Man Wong, 2016

机译：具有自对准源极/漏极区域的氧化锌薄膜晶体管掺杂注入硼以提高热稳定性
8. Avalanche-Induced Drain-Source Breakdown in Silicon-on-Insulator n-MOSFET's [R] . Young, K. K., Burns, J. A. 1988

机译：绝缘体上硅n-mOsFET中的雪崩引起的漏源击穿

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