Statistical modeling for post-cycling data retention of split-gate flash memories

摘要

In developing a precise model for post-cycling data retention failure rate of split-gate flash memories, a statistical method is proposed for the extraction of the floating-gate potential from the measured bit-cell-current data. Floating gate charge leakage mechanism during retention of split-gate flash memories is investigated as well. While multiple leakage mechanisms maybe the responsible for the failure bits in stack-gate flash memories, it is found that stress induced leakage current is the major cause for post-cycling data retention failure bits in split-gate flash memories.