Effects of the field dependent occupation ofelectrical-stress-generated traps on the conduction and breakdown ofthin SiO₂ films

摘要

The authors study the influence of the partial occupation of theNTS (neutral trapping sites) on the Fowler-Nordheim injection and on theevolution of the stress specifications for thin SiO₂ films.The results indicate that ν can be considered to be constant inconstant-voltage stress and constant-current stress experiments.However, in the case of voltage ramp experiments, this condition is notsatisfied and the transmission coefficient has to be numericallyrecalculated after small time intervals to determine the evolution ofthe current and of the NTS density with stress time. It is also shownthat the partial compensation of the field dependences of the generationrate and the occupation function is such that the evolution of theapplied field with time is pseudolinear