InP hot electron transistors with reduced emitter width for controllability of collector current by gate bias

摘要

InP hot electron transistor with reduced emitter width was fabricated for controllability of collector current by gate bias. In our hot electron transistor, an electron propagates only through an intrinsic semiconductor. To reduce emitter width and remove the leak pass, InP regrowth process for metal gate was eliminated. As a result, the two-terminal emitter-gate current-voltage characteristics showed negative differential resistance and the emitter current passed through the double barrier structure was confirmed. Furthermore gate-collector leakage current could be reduced as a result of reducing gate electrodes area. In common-gate characteristics, linear increase of collector current due to resonant tunneling emitter structure was confirmed.