首页> 外国专利> Protective device for protecting insulated gate bipolar transistor of electrical controlled circuits against short circuit and overcurrent, has wiring unit whose current outputs are connected between emitter and collector of transistor

Protective device for protecting insulated gate bipolar transistor of electrical controlled circuits against short circuit and overcurrent, has wiring unit whose current outputs are connected between emitter and collector of transistor

机译:用于保护电控电路的绝缘栅双极晶体管免受短路和过电流影响的保护装置,其接线单元的电流输出连接在晶体管的发射极和集电极之间

摘要

The device has a transmitter (2) connected between power control switch units (16) for protecting an insulated gate bipolar transistor (IGBT) (1). A resistive impedance type power sensor (5) is connected to a collector (3) and an emitter of the IGBT. An electronic control circuit (6) is connected between the sensor and the collector of the IGBT. An alternating current to direct current (AC-DC) rectifier (10) is connected with a power wiring unit (19). Direct current outputs (13, 13 ') of the wiring unit are connected between the emitter and the collector of the IGBT in a parallel manner.
机译:该设备具有连接在功率控制开关单元(16)之间的发射器(2),用于保护绝缘栅双极晶体管(IGBT)(1)。电阻阻抗型功率传感器(5)连接到IGBT的集电极(3)和发射极。电子控制电路(6)连接在传感器和IGBT的集电极之间。交流至直流(AC-DC)整流器(10)与电源接线单元(19)连接。布线单元的直流输出(13、13')以并联方式连接在IGBT的发射极和集电极之间。

著录项

  • 公开/公告号ES2221552A1

    专利类型

  • 公开/公告日2004-12-16

    原文格式PDF

  • 申请/专利权人 DISENOS ELECTRONICOS S.L.;

    申请/专利号ES20030000505

  • 发明设计人 CALL HERNANDEZ PEDRO;

    申请日2003-03-03

  • 分类号H02H3/02;

  • 国家 ES

  • 入库时间 2022-08-21 22:14:54

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