Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of germanium

摘要

Tunneling and depletion-mode poly-Ge TFTs were fabricated at temperatures as low as 150/spl deg/C and 200/spl deg/C respectively. Fabrication of the tunneling TFTs was based on stress-assisted lateral growth of Ge from Cu-seeded islands. In a different approach, depletion-mode TFTs were fabricated, based on metal-free crystallization of Ge by successive steps of hydrogenation and annealing.