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Compact electron-based extreme ultraviolet source at 13.5 nm

机译:紧凑的基于电子的13.5 nm极紫外光源

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Generation of extreme ultraviolet (EUV) radiation from solid targets is studied and a compact EUV source for small-scale lithographic applications and EUV metrology is developed. This source is based on a transfer of conventional x-ray tube technology into the EUV spectral range. As in an ordinary x-ray tube, electrons are generated by a tungsten filament and accelerated in a high-voltage electric field towards a solid target. In the demonstrated "EUV tube" beryllium and silicon targets are used to generate radiation at 11.4 nm and 13.5 nm, respectively. The absolute conversion efficiencies into EUV photons are measured. At 13.5 nm an EUV power of 34 μW or 2x10~(12) photons/s (in 2% bandwidth and a solid angle of 2π sr) is demonstrated. Prospects for a further power scaling of the EUV source are discussed.
机译:研究了从固体靶标产生极紫外(EUV)辐射的情况,并开发了用于小型光刻应用和EUV计量学的紧凑型EUV源。此源基于将常规X射线管技术转移到EUV光谱范围内的结果。像在普通X射线管中一样,电子由钨丝产生,并在高压电场中朝着固体靶加速。在演示的“ EUV管”中,铍和硅靶分别用于产生11.4 nm和13.5 nm的辐射。测量到EUV光子的绝对转换效率。在13.5 nm处,EUV功率为34μW或2x10〜(12)光子/秒(带宽为2%,立体角为2πsr)。讨论了进一步提高EUV源功率的前景。

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