Dual-polarity high voltage generator design for non-volatile memories

摘要

A novel voltage generator using 4 clocks with two different phases is presented in this work to provide a high voltage supply required by non-volatile memories during programming mode and erase mode operations. Both the positive and negative polarities of the voltage are generated to serve as the programming voltage and the erase voltage, respectively. The proposed design is carried out by gated pass transistors and switched capacitors. The regulated generated voltages which the proposed design can provide is +11.7 V and -11.6 V given VDD = 2.5 V when the circuit is implemented by TSMC 0.25 /spl mu/m 1P5M CMOS technology. The maximum power dissipation is estimated to be 3.8 mW given 12.5 MHz clocks.