Non-volatile memory component e.g. NAND-flash memory component, has pre-loading generator applying delete voltages to global word lines during attempts of delete operation, and volume voltage generator applying volume voltage to cells

摘要

The component has a block selection unit (160) connecting local word lines with global word lines in response to a block selection signal. A pre-loading generator (50) is configured to apply delete voltages to the global word lines during deletion attempts of a delete operation, where the delete voltages are positive voltages. One deletion attempt is implemented when another deletion attempt does not execute the delete operation effectively. A volume voltage generator (40) applies volume voltage to a volume of memory cells during the delete operation. Independent claims are also included for the following: (1) a method for deleting non-volatile memory component (2) a method for controlling the delete operation of the non-volatile memory component.