Non-volatile memory unit e.g. flash memory unit, has word line voltage generator generating voltage impulse sequences, where increase of voltage impulse of one of sequences is higher than increase of voltage impulse of another sequence

摘要

The memory unit has a word line voltage generator (1750) generating two voltage impulse sequences and creating the voltage impulse sequences selectively at selected word lines to program non-volatile memory cells. The memory cells are connected with the selected word line. An increase of a voltage impulse of one of the voltage impulse sequences is higher than an increase of a voltage impulse of another voltage impulse sequence. Independent claims are also included for the following: (1) a method for programming a non-volatile memory unit (2) a memory system with a non-volatile memory unit.