Reference voltage generating unit for use in semiconductor memory device, has distributing unit generating reference voltage, clamping control unit clamping voltage level at constant level, control unit increasing voltage level

摘要

The circuit (100) has a distributing unit (110) generating a reference voltage with a voltage level varying based on an operating mode in response to an external power supply voltage. A clamping control unit (130) clamps a voltage level of the reference voltage at a constant level in response to a control voltage. A control unit (120) increases/decreases a voltage level in response to operating mode signals.