Programming non-volatile semiconducting memory involves applying voltage sequence to trough regions, programming voltage to word lines as trough area biased by coupling voltage

摘要

The method involves feeding a first lower or second higher supply voltage to bit lines corresponding to data bits in page buffers, biasing a second trough region with the first voltage, switching off the voltage supplied to the second trough area to hold floating, biasing it with a coupling voltage lower than the first voltage and feeding a programming voltage to word lines while the floating second area is biased by the coupling voltage.