Noble FeRAM technologies with MTP cell structure and BLT ferroelectric capacitors

机译：具有MTP单元结构和BLT铁电电容器的Noble FeRAM技术

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A 16 Mb 1TIC FeRAM with a novel cell structure has been successfully developed with 0.25 /spl mu/m process technology using (Bi,La)/sub 4/Ti/sub 3/O/sub 12/ (BLT) capacitors for the first time. The developed FeRAM is highly scalable and reliable as a result of applying an MTP (merged top electrode and plate line) structure and BLT stacked capacitor, respectively.

机译：具有新颖的细胞结构的16 MB 1TIC Feram，使用（Bi，La）/ Sub 4 / Sub 3 / O / Sub 12 /（BLT）电容器是为本的0.25 / SPL MU / M工艺技术开发时间。由于施加MTP（合并的顶电极和板线）结构和BLT堆叠电容，发达的Feram是高度可伸缩的并且可靠地可靠。

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《Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International》|2003年|p.34.5.1-34.5.4|共4页
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Oh S.-H.; Hong S.-K.; Noh K.-H.; Kweon S.-Y.; Kim N.-K.; Yang Y.-H.; Kim J.-G.; Seong J.-Y.; Jang I.-W.; Park S.-H.; Bang K.-H.; Lee K.-N.; Jeong H.-J.; Son J.-H.; Lee S.-S.; Choi E.-S.; Sun H.-J.; Yeom S.-J.; Ban K.-D.; Park J.-W.; Park G.-D.; Song S.-Y.; Shin J.-H.; Lee S.-I.; Park Y.-J.;
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中图分类无线电电子学、电信技术;
关键词
ferroelectric storage; bismuth compounds; lanthanum compounds; ferroelectric capacitors; random-access storage; merged top electrode/plate line structure; BLT stacked capacitor; ferroelectric memory; 1TIC FeRAM; MTP cell structure; BLT ferroelectric capa;

机译：铁电存储;铋化合物;镧化合物;铁电电容器;随机存取存储;合并的顶部电极/板线结构; BLT堆叠电容器;铁电存储器; 1TIC FeRAM; MTP单元结构; BLT铁电电容器;

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专利

1. EXCELLENT PROPERTIES OF 0.15 MICROMETER FERROELECTRIC PZT CAPACITOR WITH SRO ELECTRODES FOR FUTURE GBIT-SCALE FERAMS [J] . HIROYUKI KANAYA, YOSHINORIKUMURA, YASUYUKI TANIGUCHI Integrated Ferroelectrics . 2001,第1a4期

机译：适用于未来GBIT规模陶瓷的0.15微米带Sro电极的铁电PZT电容器的优异性能
2. First 0.18 mum SBT-Based Embedded FeRAM Technology with Hydrogen Damage Free Stacked Cell Structure [J] . EIJI FUJII, KIYOSHI UCHIYAMA Integrated Ferroelectrics . 2003,第1期

机译：首款基于SBT的0.18微米嵌入式FeRAM技术，无氢损伤堆叠式电池结构
3. NAND-Structured Trench Capacitor Cell Technologies for 256 Mb DRAM and Beyond [J] . Takeshi HAMAMOTO, Yutaka ISHIBASHI, Masami AOKI: Yoshihiko SAITOH, IEICE Transactions on Electronics . 1995,第7期

机译：用于256 Mb DRAM的NAND结构的沟槽电容器单元技术
4. Noble FeRAM Technologies with MTP Cell Structure and BLT Ferroelectric Capacitors [C] . S.-H. Oh, S.-K Hong, K.-H. Noh, IEEE International Electron Devices Meeting . 2003

机译：具有MTP电池结构和BLT铁电电容的高贵的Feram技术
5. Technology development of ferroelectric capacitors with iridium electrodes for ULSI memory applications [D] . Chen, Tung-Sheng 1998

机译：用于ULSI存储器的带有铱电极的铁电电容器的技术发展
6. Characterization of Bi and Fe co-doped PZT capacitors for FeRAM [O] . Jeffrey S Cross, Seung-Hyun Kim, Satoshi Wada, 2010

机译：FeRAM的Bi和Fe共掺杂PZT电容器的特性
7. Fabrication and investigation of three-dimensional ferroelectric capacitors for the application of FeRAM [O] . Chia-Pin Yeh, Marco Lisker, Bodo Kalkofen, 2016

机译：用于FeRam应用的三维铁电电容器的制作与研究

Noble FeRAM technologies with MTP cell structure and BLT ferroelectric capacitors

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