light emitting diodes; aluminium compounds; gallium compounds; III-V semiconductors; wide band gap semiconductors; ultraviolet sources; lighting; quantum well devices; GaN based LED; high brightness LED; UV LED; LED colors; blue LED; green LED; white LED;
机译:以Zn(OH)_2-PVA纳米复合材料为种子层的微波辅助化学浴沉积制备ZnO纳米棒/ p-GaN高亮度UV LED
机译:使用薄缓冲层技术在150 mm Si衬底上生长的高亮度GaN-on-Si基蓝色LED
机译:瞬态电压抑制二极管,用于保护高亮度GaN基LED免受各种静电放电冲击
机译:GaN基高亮度LED和UV LED
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:通过氧化石墨烯钝化抑制p-GaN的自发极化:增强GaN UV-LED的光输出
机译:在GaN纳米柱基板上过度生长的高效且明亮的LED