【24h】

GaN based high brightness LEDs and UV LEDs

机译:GaN基高亮度LED和UV LED

获取原文

摘要

This talk summarizes the important materials and device results in gallium nitride based light emitter technology. GaN has emerged as the most promising material for high brightness LEDs with colors ranging from UV to blue, green, and white. Recent progress on ultra-violet (UV) emitting LEDs using AlGaN single quantum wells indicates wavelengths as short as 292 nm are achievable. UV LEDs are of great interest for solid state white lighting due to the high conversion efficiencies of typical phosphors in the UV spectrum. This paper focuses on recent progress in improving the properties of UV LEDs.
机译:本演讲总结了基于氮化镓的发光器技术的重要材料和器件结果。 GaN已成为高亮度LED的最有前途的材料,其颜色范围从UV到蓝色,绿色和白色。使用AlGaN单量子阱的发射紫外线(UV)的LED的最新进展表明,可以实现短至292 nm的波长。由于典型的磷光体在紫外光谱中的高转换效率,紫外光LED对于固态白光引起了极大的兴趣。本文重点关注改善UV LED性能的最新进展。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号