Optical properties of the quantum dot structures self-formed in GaAs/InAs short-period superlattices grown on InP(411)A substrates

摘要

High lateral density (/spl sim/10/sup 11/ cm/sup -2/) quantum dot (QD) structures are self-formed by growing the (GaAs)/sub 2/(InAs)/sub n/ short period superlattices (SLs) on InP (411)A substrates by gas source MBE. QD structures are well-aligned along two perpendicular directions. Multi-layer quantum dot structures sandwiched with InP barrier layers showed a strong photoluminescence (PL) emission. The PL wavelength of 1.3-1.6 /spl mu/m was easily obtained by controlling the SL period as well as the InAs monolayer number (layer thickness). We also fabricated light emitting diodes (LEDs) and observed current-injection light emission.