Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides

摘要

This paper introduced a new class of complex rare earth/transition metal oxides in which the energies of the lowest conduction band states can be controlled through bonding of the constituent Re and Tm atoms to a common oxygen atom. The electronic structure of GdScO/sub 3/, the electronic band edge structure of Sc/sub 2/O/sub 3/, and an ab initio theory were studied.