GaAs Wafer Overlay Performance Effected by Annealing Heat Treatment - Part Ⅱ

摘要

Further analysis on how wafer distortion affecting the overlay performance during annealing treatment in GaAs wafer fabrication was conducted quantitatively using MONO-LITH software (NVS). The experimental results were decomposed as wafer translation, scaling at X and Y direction, rotation and orthogonality. The grid residual was used to describe non-correctable distortion of the wafers, which fits the equation given below: Residual = Measured - Modeled, which is not a modeled component. The Vector Map displays distribution of error vectors over the wafer or field for various components or overall effect. Based on the component analysis that the misalignment caused by translation and scaling can be compensated by heat treatment if the wafer is placed at a favorable orientation. This can help mitigate the effects of substrate quality in manufactory.