Electronic structures of Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y//GaAs compressively strained quantum wells

摘要

The electronic structures of the Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y//GaAs compressive strained quantum wells (QWs) are investigated using a 6/spl times/6 k/spl middot/p Hamiltonian including the heavy hole, light hole and spin-orbit splitting band. By varying the well width and mole fraction of N in the well material, the effects of quantum confinement and compressive strain are examined. The curves of dependence of transition energy on well width and N mole fraction are obtained. The valence subband energy dispersion curves and TE and TM squared optical transition matrix elements of three possible quantum well structures for emission at 1.3 /spl mu/m are given.