Highly reliable 1 Mbit ferroelectric memories with newly developed BLT thin films and steady integration schemes

摘要

Highly reliable packaged 1 Mbit ferroelectric memories with 0.35 /spl mu/m CMOS ensuring ten-year retention and imprint at 175/spl deg/C have been successfully developed for the first time. These excellent reliabilities have resulted from newly developed BLT ferroelectric films with superior performance and steady integration schemes free from attacks of process impurities.