Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime

摘要

A systematic experimental study on the electrical stress characteristics of MOS capacitors incorporating in-situ B-doped P/sup +/ poly-Si/sub 1-x/Ge/sub x/ material and ultra-thin NO-grown SiO/sub 2/ dielectric (3.0 nm) is presented. Devices with poly-SiGe electrodes showed lower rate of increase in the current-time (I-t) characteristics and more stress tolerance regarding breakdown characteristics. This is consistent with B diffusion properties in both poly-Si and poly-SiGe and it supports the use of poly-SiGe as a promising gate electrode in MOS devices with improved performance.