Investigations on duble-diffused MOS (DMOS) transistors under ESD zap conditions

摘要

in this paper we analyzed, through experiments and 2-D simulations, the behavior under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching on of the parasitic bipolar structure and in the failure mechanism.