Evaluation of NLD mask dry etching system

机译：NLD掩模干蚀刻系统的评估

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Abstract: An advanced photomask dry etching system (NLDE-9035 Prototype) has been evaluated. This system adopts new plasma source NLDE, and has a 230 mm mask capability. In this experiment, etching uniformity, selectivity and etching pattern profile were mainly evaluated. Etching uniformity of 20 nm (range) was obtained and good pattern fidelity was confirmed. !1

机译：摘要：已经评估了一种先进的光掩模干法刻蚀系统（NLDE-9035原型）。该系统采用新的等离子源NLDE，并具有230 mm的掩模能力。在该实验中，主要评估蚀刻均匀性，选择性和蚀刻图案轮廓。获得20nm（范围）的蚀刻均匀性，并且确认了良好的图案保真度。！1

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《Conference on photomask and X-Ray mask technology》|1999年|p.147-152|共6页
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Tatsuya Fujisawa; Semiconductor Leading Edge Technologies; Inc.; Kanagawa; Japan; Takayuki Iwamatsu; Semiconductor Leading Edge Technologies; Inc.; Yokohama Kanagawa; Japan; Koji Hiruta; Semiconductor Leading Edge Technologies; Inc.; Yokohama Kanagawa; Japan; Hiroaki Morimoto; Semiconductor Leading Edge Technologies; Inc.; Yokohama Kanagawa; Japan; Takaei Sasaki; ULVAC Coating Corp.; Chichibu-shi Saitama; Japan; Kazuhide Yamashiro; HOYA Corp.; Tokyo; Japan.;
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中图分类物理学;
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Evaluation of NLD mask dry etching system

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