A copper electroplating process suitable for routine IC manufacturing use must deliver Cu films that reproducibly fill deep, narrow damascene features. In this paper, several important factors such as seed layer coverage, plating waveform (DC, reversed-pulse), and additive chemistry formulation were examined in terms of their effect on the elimination of localized void defects within filled structures. A combination of two-step DC plating and custom additive chemistry enabling complete fill of 9:1 aspect ratio (AR), 0.13 /spl mu/m trenches and 5:1 AR, 0.18 /spl mu/m vias was accomplished.
展开▼
机译：适用于常规IC制造的电镀铜工艺必须提供可重复填充深而窄的镶嵌特征的Cu膜。在本文中，研究了一些重要因素，例如种子层覆盖率，电镀波形（直流电，反向脉冲）和添加剂化学配方，这些因素对消除填充结构内的局部空隙缺陷有影响。完成了两步DC电镀和定制添加剂化学的结合，可以完全填充9：1长宽比（AR），0.13 / spl mu / m的沟槽和5：1 AR，0.18 / spl mu / m的通孔。
展开▼
