A directional current switch using silicon single electron transistors controlled by charge injection into silicon nano-crystal floating dots

摘要

A directional current switch is fabricated using two single electron transistors (SETs) with a common gate electrode. In order to adjust the peak positions of Coulomb blockade oscillations, SETs with Si nanocrystal floating dots are utilized. The phases of two SETs are separately controlled using only one gate electrode and the operation of current switch is successfully demonstrated. This method for the phase control in SETs is very important for practical integration of SETs.