We will describe the first modular integration of a SiGe:C heterojunction bipolar transistor (SiGe:C HBTs) into a conventional 0.25 /spl mu/m, epi-free CMOS platform. The high temperature stability of base doping profiles in SiGe:C HBTs and an optimized collector linkage have allowed the modular integration of an npn device with f/sub T//f/sub max/ of 55/90 GHz into two variants of a conventional epi-free 0.25 /spl mu/m CMOS platform. In both cases, the original CMOS steps and the electrical parameters of the CMOS devices remain essentially unchanged. Yield and electrical characteristics of the integrated SiGe:C HBT are shown to be the same as those from a bipolar-only process.
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机译:我们将描述SiGe:C异质结双极晶体管(SiGe:C HBT)到传统的0.25 / spl mu / m,无Epi的CMOS平台的首次模块化集成。 SiGe:C HBT中基本掺杂分布的高温稳定性和优化的集电极连接使得具有f / sub T // f / sub max / 55/90 GHz的npn器件可以模块化集成到传统的两个变体中Epi-free 0.25 / spl mu / m CMOS平台。在这两种情况下,原始CMOS步骤和CMOS器件的电参数基本保持不变。集成SiGe:C HBT的产率和电学特性与仅采用双极工艺的结果相同。
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