A Direct Tunneling Memory (DTM) utilizing novel floating gate structure

摘要

A novel floating gate (FG) memory, Direct Tunneling Memory (DTM) is demonstrated. The main features of DTM are an ultra-thin tunnel oxide with leakage stop barrier and sidewall control gate (CG) which prevent the overlap between a FG and source/drain (SD) extensions. This structure suppresses the gate leakage current and improves the retention time while high speed write/erase operations with low voltage can be achieved due to the ultra-thin tunnel oxide.