Photoacid Generating Polymers for surface Modification Resists

摘要

Terpolymers of methyl methacrylate, 1,2,3,4-tetrahydro-1-naphthylideneamino p-styrenesulfonate, and an amide-cintaining monomer or tetrahydrofurfuryl methacrylate were prepared. These polymers can be used as oxygen plasma-developablesurface modification resists. When the irradiated polymer films were exposed to the vapor of alkoxysilanes at 30 deg C, polysiloxanenetworks were formed at the film surface. The polysiloxane formation rate was enhanced by incorporation of amide or ether unit into polymers. Amide units were more effective than ether units. The film surface modified with polysiloxanes showed a good resistance to the etching with an oxygen plasma. Using the surface modification resist system, negative-tone images were generated by an ArF excimer laser lithgraphy.