Characterization and optimization of a bipolar ESD-device by measurements and simulations

摘要

Using an example of a bipolar transistor for ESD protection, we present new ways to incorporate a simulation tool chain into the design process. After calibration of the simulators, the best layout dimensions and well doping profiles could be evaluated. Differences in the devices' switching behaviour under CDM and HBM stress conditions are demonstrated by transient device simulations. Finally, we outline a method to extract a set of parameters for a compact circuit model.