Silicon carbide is a very promising semiconductor material for high temperature applications and it can also be expected to become the material of choice for power semiconductor devices. One of the requirements for a working semiconductor device is the availability of a low resistance and thermally stable ohmic contact. Contact systems on n-6H-SiC using titanium-based contact materials (Ti/sub 3/SiC/sub 2/, TiSi/sub 2/, TiC), diffusion barriers (Pd, Ti, TiC, TiCN, W) and top metallizations (Al, Au, Pd) were investigated. Best results were obtained using the SiC-Ti/sub 3/SiC/sub 2/-Pd-Au contact layer structure, which is morphologically and electrically stable for up to 90 hours at 600/spl deg/C and exhibits good ohmic behaviour.
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机译：碳化硅是用于高温应用的非常有前途的半导体材料，并且它也有望成为功率半导体器件的首选材料。对于工作的半导体器件的要求之一是低电阻和热稳定的欧姆接触的可用性。使用钛基接触材料（Ti / sub 3 / SiC / sub 2 /，TiSi / sub 2 /，TiC），扩散势垒（Pd，Ti，TiC，TiCN，W）和顶部在n-6H-SiC上的接触系统研究了金属化（Al，Au，Pd）。使用SiC-Ti / sub 3 / SiC / sub 2 / -Pd-Au接触层结构可获得最佳结果，该结构在600 / spl deg / C的温度下可保持90小时的形态和电学稳定性，并表现出良好的欧姆特性。
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