Reduction of lattice relaxation in thick strained InAs layer during growth interruption

摘要

We found that the relaxation rate of strained InAs during growth interruption in the molecular beam epitaxy (MBE) chamber depends strongly on InAs layer thickness and As/sub 4/ background pressure. By reducing the As/sub 4/ background pressure, we successfully prevented lattice relaxation of a 6 nm InAs layer, which is 1.5 times thicker than previously reported critical thickness on an InP substrate.