Mid-infrared LEDs using InAs/sub 0.71/Sb/sub 0.29//InAs/Al/sub 0.25/In/sub 0.75/As/InAs strained-layer superlattice active layers

摘要

The use of strained-layer superlattice is a well-established technique to lower Auger recombination in the active layer of mid-IR LEDs and laser. We have shown by temperature-dependent photoluminescence experiments the Auger recombination can be further reduced by incorporating InAs spacer layer inside symmetrically-strained InAsSb/InAlAs superlattices and that the thickness of the spacer is critical for the improved operation. The layer were grown by molecular beam epitaxy on (001) InAs substrates. The crystalline quality of the grown superlattices is demonstrated by means of transmission electron microscopy, atomic force microscopy and X-ray diffraction measurement