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Power-handling capability of W-band InGaAs pin diode switches

机译:W波段InGaAs PIN二极管开关的功率处理能力

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摘要

The power-handling capability of InGaAs pin diodes is reported and compared to that of GaAs pin diodes. The trade-off between power handling, high frequency performance, and bias conditions is considered. W-band InGaAs pin diode monolithic switches were fabricated using coplanar-waveguide technology, and their large-signal characteristics measured using a W-band load-pull characterization system are reported for the first time.
机译:报告了InGaAs pin二极管的功率处理能力,并将其与GaAs pin二极管的功率处理能力进行了比较。考虑了功率处理,高频性能和偏置条件之间的权衡。 W波段InGaAs pin二极管单片开关是使用共面波导技术制造的,并且首次报道了使用W波段负载-拉特性系统测量的大信号特性。

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