Optical characterization of the energy gap of MOVPE-grown InAsBi

摘要

The InBi-content dependence of the energy gap (Eg) and its temperature dependence are evaluated for InAsBi-epitaxial layers by optical-transmission and low-temperature PL measurements. Eg decreases with increasing InBi content, and this relation is expressed by a linear equation. The temperature dependence of Eg decreases with increasing InBi-content. The /spl Delta/Eg//spl Delta/T of 0.22 meV/K obtained for InAs/sub 0.963/Bi/sub 0.037/ is smaller than that of InSb (0.29 meV/K), whose energy gap is smaller than that of InAs/sub 0.963/Bi/sub 0.037/.