Abnormal Zn diffusion along slip dislocation of InP/InGaAs/InP PIN photodiode

机译：Zn沿着InP / InGaAs / InP PIN光电二极管的滑脱位错扩散

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Crystal quality and dark current characteristics for InP/InGaAs/InP PIN Photodiode along slip dislocation of sulfur-doped InP substrate have been studied. We found for the first time that Zn is abnormally diffused on the surface of PIN-PD along slip dislocations in InP(S) substrate, which means that the PIN structure in the chip is partially destroyed.

机译：研究了InP / InGaAs / InP PIN光电二极管沿掺硫InP衬底的滑动错位的晶体质量和暗电流特性。我们首次发现Zn在PIN-PD的表面上沿着InP（S）衬底中的滑脱位错异常扩散，这意味着芯片中的PIN结构被部分破坏。

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《Indium Phosphide and Related Materials, 1998 International Conference on》|1998年|P.517-520|共4页
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Iwasaki; T.; Iguchi; Y.;
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中图分类无线电电子学、电信技术;
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2. Zn Doping of InP, InAsP/InP, and InAsP/InGaAs Heterostructures Through Metalorganic Vapor Phase Diffusion (MOVPD) [J] . K. Vanhollebeke, M. Dhondt, I. Moerman, Journal of Electronic Materials . 2001,第8期

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3. USING SELECTIVE Zn DIFFUSION TO ENHANCE THE PERFORMANCE OF THE PHOTODIODE IN InP/InGaAs PD/HBT INTEGRATION [J] . Shou-Chien Huang, Wei-Kuo Huang, Yue-Ming Hsin, Microwave and optical technology letters . 2009,第9期

机译：使用选择性Zn扩散提高InP / InGaAs PD / HBT集成中光电二极管的性能
4. Abnormal Zn diffusion along slip dislocation of InP/InGaAs/InP PIN photodiode [C] . Iwasaki T., Iguchi Y., Institute of Electric and Electronic Engineer International Conference on Indium Phosphide and Related Materials . 1998

机译：INP / INGAAS / INP PIN光电二极管的滑移脱位异常Zn扩散
5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

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7. Zn-diffused back-illuminated p-i-n photodiodes in InGaAs/InP grown by molecular beam epitaxy [O] . T. P. Lee 2012

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8. Calculation of the Capacitance-Voltage Characteristics of p+-InP/n-InP/n-InGaAsP Photodiodes [R] . Donnelly, J. P. 1981

机译：p + -Inp / n-Inp / n-InGaasp光电二极管的电容 - 电压特性计算

Abnormal Zn diffusion along slip dislocation of InP/InGaAs/InP PIN photodiode

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