MOCVD grown AlInAs/GaInAs short-period-superlattice resonant-tunneling transistor(SPSRTT)

摘要

A new short-period-superlattice resonant tunneling transistor (SPSRTT) with a 5-period i-AlInAs-GaInAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performances, e.g., the very small offset voltage, and the interesting negative-differential-resistance (NDR) phenomenon at room temperature. The NDR performance is believed to be caused by the RT action through the superlattice region.