MOCVD-grown AlInAs/GaInAs MODFET with drain currents higher than 1.3 mA/mm

摘要

Very high-density and high-mobility AlInAs/GaInAs modulation-doped heterostructures have been successfully grown by low-pressure MOCVD. FETs, having gate-lengths of 0.25 mu m, fabricated from these heterostructures show transconductances as high as 700 mS/mm, and drain saturation currents in excess of 1.3 mA/mm at V/sub gs/=0 V. This current density is among the highest yet reported for FETs grown by any technique. The extracted current-gain cutoff frequency is 78 GHz.