Fabrication and characterization of InAs/AlGaSb quantum wire transistors

摘要

Fabrication of InAs/AlGaSb quantum wire transistors (QWTs) and quasi-one-dimensional (1D) transport properties are reported. Low-dimensional electron transport properties were characterized by magneto-transport measurements at 4.2 K. We have succeeded in a decent demonstration of QWTs with narrow channels down to 100 nm width. The transconductance in multiple QWTs with various wire width are compared to discuss 1D electron transport properties.