Evaluation of InAlAs Schottky characteristics grown by MOCVD

摘要

Schottky characteristics of InAlAs grown by MOCVD have been evaluated. InAlAs Schottky characteristics is strongly affected by MOCVD growth temperature. The reverse current of InAlAs grown at 700/spl deg/C is more than one order of magnitude larger than that for 750/spl deg/C grown material. From DLTS measurement, a large signal due to an electron trap with an activation energy of 0.45 eV has been observed in InAlAs grown at 700/spl deg/C. The results of C-V, Hall and SIMS measurements suggest that the trap is of acceptor-type and seems to be related not to impurities but to intrinsic defects. The mechanism of the large reverse current in InAlAs grown at 700/spl deg/C is thought to be conduction through the trap.